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MMBT918LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT918LT1G
   Código: M3B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 15 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 600 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SOT-23
 

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MMBT918LT1G Datasheet (PDF)

 ..1. Size:75K  onsemi
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MMBT918LT1G

MMBT918LT1GVHF/UHF TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSwww.onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 15 VdcCollector-Base Voltage VCBO 30 Vdc 2EMITTEREmitter-Base Voltage VEBO 3.0 VdcCollector Current - Continuous IC 50 mAdc3THERMAL CHARAC

 4.1. Size:113K  onsemi
mmbt918lt1-d.pdf pdf_icon

MMBT918LT1G

MMBT918LT1GVHF/UHF TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 15 VdcCollector-Base Voltage VCBO 30 Vdc2EMITTEREmitter-Base Voltage VEBO 3.0 VdcCollector Current - Continuous IC 50 mAdcTHERMAL CHARA

 6.1. Size:97K  motorola
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MMBT918LT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT918LT1/DVHF/UHF TransistorMMBT918LT1NPN SiliconCOLLECTOR31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 15 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 3.0 VdcCollector Current Co

 7.1. Size:748K  fairchild semi
pn918 mmbt918.pdf pdf_icon

MMBT918LT1G

PN918 MMBT918CEC TO-92BBE SOT-23Mark: 3BNPN RF TransistorThis device is designed for use as RF amplifiers, oscillators andmultipliers with collector currents in the 1.0 mA to 30 mA range.Sourced from Process 43.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 30 V

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MMBT8550LT1 | MMBT8099LT1G | TIP30E | 2SC4116-GR | 2SC4116-Y | L2SB1197KQLT1G | CHDTC114WUGP

 

 
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