MMBTA06WT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMBTA06WT1G,SMMBTA06WT1G,Driver TransistorNPN SiliconMoisture Sensitivity Level: 1http://onsemi.comESD Rating: Human Body Model - 4 kVESD Rating: Machine Model - 400 VFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSC-70Site and Control Change RequirementsCASE 419 These Devices are Pb-Free, Halogen

MMBTA06WT1GDriver TransistorNPN SiliconMoisture Sensitivity Level: 1ESD Rating: Human Body Model -- 4 kVESD Rating: Machine Model -- 400 Vhttp://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value Unit3Collector -- Emitter Voltage VCEO 80 VdcCollector -- Bas

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PMMBTA06W NPN High Voltage Transistor 80V 225mW Voltage Power Features NPN silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-323 Package Terminals: Solderable per MIL-STD-750, Method 2026 Appr

MMBTA05W/MMBTA06W GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN SILICON EPITAXIAL PLANAR TRANSISTOR FORSWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = 500 mA PB FREE PRODUCT ARE AVAILABLE :98.5% SN ABOVE CAN MEET ROHSENVIRONMENT SUBSTANCE DIRECTIVE REQUEST MECHANICAL DATA CASESOT-323 TERMINALSSOLDERABLE PER MIL-STD-202G, MET