MMBTA06WT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBTA06WT1G  📄📄 

Código: GM

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-323

  📄📄 Copiar 

 Búsqueda de reemplazo de MMBTA06WT1G

- Selecciónⓘ de transistores por parámetros

 

MMBTA06WT1G datasheet

 ..1. Size:111K  onsemi
 mmbta06wt1g.pdf pdf_icon

MMBTA06WT1G

MMBTA06WT1G, SMMBTA06WT1G, Driver Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model - 4 kV ESD Rating Machine Model - 400 V Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique SC-70 Site and Control Change Requirements CASE 419 These Devices are Pb-Free, Halogen

 4.1. Size:133K  onsemi
 mmbta06wt1.pdf pdf_icon

MMBTA06WT1G

MMBTA06WT1G Driver Transistor NPN Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model -- 4 kV ESD Rating Machine Model -- 400 V http //onsemi.com Features COLLECTOR 3 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit 3 Collector -- Emitter Voltage VCEO 80 Vdc Collector -- Bas

 6.1. Size:193K  onsemi
 mmbta06w smmbta06w.pdf pdf_icon

MMBTA06WT1G

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 6.2. Size:273K  panjit
 mmbta06w.pdf pdf_icon

MMBTA06WT1G

PMMBTA06W NPN High Voltage Transistor 80V 225mW Voltage Power Features NPN silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case SOT-323 Package Terminals Solderable per MIL-STD-750, Method 2026 Appr

MOSTRAR MÁS

Otros transistores... MMBT9018LT1, MMBT918LT1G, MMBT945-H, MMBT945-L, MMBTA05LT1G, MMBTA05W, MMBTA06LT1G, MMBTA06W, 2SD718, MMBTA10, MMBTA10Q, MMBTA11, MMBTA13LT1G, MMBTA14LT1G, MMBTA42-G, MMBTA42LT1G, MMBTA55LT1G