MMBTA06WT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMBTA06WT1G, SMMBTA06WT1G, Driver Transistor NPN Silicon Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model - 4 kV ESD Rating Machine Model - 400 V Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique SC-70 Site and Control Change Requirements CASE 419 These Devices are Pb-Free, Halogen

MMBTA06WT1G Driver Transistor NPN Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model -- 4 kV ESD Rating Machine Model -- 400 V http //onsemi.com Features COLLECTOR 3 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit 3 Collector -- Emitter Voltage VCEO 80 Vdc Collector -- Bas

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PMMBTA06W NPN High Voltage Transistor 80V 225mW Voltage Power Features NPN silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case SOT-323 Package Terminals Solderable per MIL-STD-750, Method 2026 Appr

MMBTA05W/MMBTA06W GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = 500 mA PB FREE PRODUCT ARE AVAILABLE 98.5% SN ABOVE CAN MEET ROHSENVIRONMENT SUBSTANCE DIRECTIVE REQUEST MECHANICAL DATA CASE SOT-323 TERMINALS SOLDERABLE PER MIL-STD-202G, MET