All Transistors. MMBTA06WT1G Datasheet

 

MMBTA06WT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMBTA06WT1G
   SMD Transistor Code: GM
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-323

 MMBTA06WT1G Transistor Equivalent Substitute - Cross-Reference Search

   

MMBTA06WT1G Datasheet (PDF)

 ..1. Size:111K  onsemi
mmbta06wt1g.pdf

MMBTA06WT1G
MMBTA06WT1G

MMBTA06WT1G,SMMBTA06WT1G,Driver TransistorNPN SiliconMoisture Sensitivity Level: 1http://onsemi.comESD Rating: Human Body Model - 4 kVESD Rating: Machine Model - 400 VFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSC-70Site and Control Change RequirementsCASE 419 These Devices are Pb-Free, Halogen

 4.1. Size:133K  onsemi
mmbta06wt1.pdf

MMBTA06WT1G
MMBTA06WT1G

MMBTA06WT1GDriver TransistorNPN SiliconMoisture Sensitivity Level: 1ESD Rating: Human Body Model -- 4 kVESD Rating: Machine Model -- 400 Vhttp://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value Unit3Collector -- Emitter Voltage VCEO 80 VdcCollector -- Bas

 6.1. Size:193K  onsemi
mmbta06w smmbta06w.pdf

MMBTA06WT1G
MMBTA06WT1G

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 6.2. Size:273K  panjit
mmbta06w.pdf

MMBTA06WT1G
MMBTA06WT1G

PMMBTA06W NPN High Voltage Transistor 80V 225mW Voltage Power Features NPN silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-323 Package Terminals: Solderable per MIL-STD-750, Method 2026 Appr

 6.3. Size:465K  tiptek
mmbta05w mmbta06w.pdf

MMBTA06WT1G
MMBTA06WT1G

MMBTA05W/MMBTA06W GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN SILICON EPITAXIAL PLANAR TRANSISTOR FORSWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = 500 mA PB FREE PRODUCT ARE AVAILABLE :98.5% SN ABOVE CAN MEET ROHSENVIRONMENT SUBSTANCE DIRECTIVE REQUEST MECHANICAL DATA CASESOT-323 TERMINALSSOLDERABLE PER MIL-STD-202G, MET

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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