MMBTA63LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G Darlington Transistors PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 Compliant* STYLE 6 MAXIMUM RATINGS COLLECTOR

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA63LT1/D Darlington Transistors MMBTA63LT1 PNP Silicon COLLECTOR 3 MMBTA64LT1 * *Motorola Preferred Device BASE 1 EMITTER 2 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCES 30 Vdc Collector Base Voltage VCBO 30 Vdc CASE 318 08, STYLE 6 Emitter Base Voltage VEBO 10

MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 C B SOT-23 B SOT-223 E Mark 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage

SEMICONDUCTOR MMBTA63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 MAXIMUM RATING (Ta=25 ) E 2.40+0.30/-0.20 1 G 1.90 CHARACTERISTIC SYMBOL RATING UNIT H 0.95 J 0.13+0.10/-0.05 Collector-Base VCBO -30 V MMBTA63/64 K 0.00