All Transistors. MMBTA63LT1G Datasheet

 

MMBTA63LT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMBTA63LT1G
   SMD Transistor Code: 2U
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 125 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5000
   Noise Figure, dB: -
   Package: SOT-23

 MMBTA63LT1G Transistor Equivalent Substitute - Cross-Reference Search

   

MMBTA63LT1G Datasheet (PDF)

 ..1. Size:486K  onsemi
mmbta63lt1g mmbta64lt1g.pdf

MMBTA63LT1G MMBTA63LT1G

MMBTA63LT1G,MMBTA64LT1G,SMMBTA64LT1GDarlington TransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCASE 318Compliant*STYLE 6MAXIMUM RATINGSCOLLECTOR

 6.1. Size:156K  motorola
mmbta63l mmbta64.pdf

MMBTA63LT1G MMBTA63LT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA63LT1/DDarlington TransistorsMMBTA63LT1PNP SiliconCOLLECTOR 3MMBTA64LT1**Motorola Preferred DeviceBASE1EMITTER 23MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCBO 30 VdcCASE 31808, STYLE 6EmitterBase Voltage VEBO 10

 7.1. Size:39K  fairchild semi
mmbta63.pdf

MMBTA63LT1G MMBTA63LT1G

MPSA63 MMBTA63 PZTA63CCEECBTO-92CBSOT-23BSOT-223EMark: 2UPNP Darlington TransistorThis device is designed for applications requiring extremely highcurrent gain at currents to 800 mA. Sourced from Process 61.See MPSA64 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage

 7.2. Size:35K  kec
mmbta63 mmbta64.pdf

MMBTA63LT1G MMBTA63LT1G

SEMICONDUCTOR MMBTA63/64TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05MAXIMUM RATING (Ta=25 )E 2.40+0.30/-0.201G 1.90CHARACTERISTIC SYMBOL RATING UNITH 0.95J 0.13+0.10/-0.05Collector-Base VCBO -30 VMMBTA63/64 K 0.00 ~

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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