MMBTA92LT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTA92LT1G
Código: 2x
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 300
V
Tensión colector-emisor (Vce): 300
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
SOT-23
Búsqueda de reemplazo de transistor bipolar MMBTA92LT1G
MMBTA92LT1G
Datasheet (PDF)
..1. Size:107K onsemi
mmbta92lt1g.pdf
MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITT
4.1. Size:105K onsemi
mmbta92lt1 mmbta93lt1.pdf
MMBTA92LT1G,MMBTA93LT1GHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS1Rating Symbol 92 93 UnitBASECollector-Emitter Voltage VCEO -300 -200 VdcCollector-Base Voltage VCBO -300 -200 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 -5.0 VdcCollector Curren
4.2. Size:411K willas
mmbta92lt1.pdf
FM120-M WILLASTHRUMMBTA9xLT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VHigh Voltage TransistorSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board
6.1. Size:145K motorola
mmbta92l mmbta93.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA92LT1/DHigh Voltage Transistors*MMBTA92LT1COLLECTORPNP Silicon3MMBTA93LT1*Motorola Preferred Device1BASE2EMITTER3MAXIMUM RATINGS1Rating Symbol MMBTA92 MMBTA93 Unit2CollectorEmitter Voltage VCEO 300 200 VdcCollectorBase Voltage VCBO 300 200 VdcCASE 31808, STYLE 6SOT
6.2. Size:154K onsemi
mmbta92l smmbta92l mmbta93l.pdf
MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITTER
6.3. Size:1860K cn yongyutai
mmbta92l mmbta92h mmbta92j.pdf
MMBTA92TRANSI STOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: High Breakdown VoltageMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -300 VCollector-Emitter Voltage VCEO -300 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -200 mACollector Current -Puised ICM -
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