BCR108F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BCR108...NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2 k, R2=47 k) BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified accord

BCR 108SNPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in on package Built in bias resistor (R1=2.2k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 108S WHs Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values U

BCR 108WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 108W WHs Q62702-C2275 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-ba

BCR 108NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 108 WHs Q62702-C2253 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base