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BCR108F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCR108F

Código: WHs

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 170 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: TSFP-3

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BCR108F Datasheet (PDF)

1.1. bcr108f.pdf Size:205K _infineon

BCR108F
BCR108F

BCR108... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see package information below • Pb-free (RoHS compliant) package1) • Qualified accord

4.1. bcr108.pdf Size:35K _siemens

BCR108F
BCR108F

BCR 108 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k?, R2=47k?) Type Marking Ordering Code Pin Configuration Package BCR 108 WHs Q62702-C2253 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEB

4.2. bcr108s.pdf Size:43K _siemens

BCR108F
BCR108F

BCR 108S NPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in on package Built in bias resistor (R1=2.2k?, R2=47k?) Type Marking Ordering Code Pin Configuration Package BCR 108S WHs Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Values Unit Collecto

 4.3. bcr108w.pdf Size:34K _siemens

BCR108F
BCR108F

BCR 108W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k?, R2=47k?) Type Marking Ordering Code Pin Configuration Package BCR 108W WHs Q62702-C2275 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage

Otros transistores... D33D3 , D33D30 , D33D4 , D33D5 , D33D6 , D33J21 , D33J22 , D33J23 , TIP122 , D33J25 , D33J26 , D33J27 , D33J28 , D33J29 , D33J30 , D33K1 , D33K2 .

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