BCR116S Todos los transistores

 

BCR116S Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCR116S
   Código: WGs
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT-363
 

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BCR116S datasheet

 ..1. Size:865K  infineon
bcr116s.pdf pdf_icon

BCR116S

BCR116... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7 k , R2=47 k ) BCR116S Two internally isolated transistors with good matching in one multichip package BCR116S For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified accordin

 ..2. Size:867K  infineon
bcr116 bcr116s bcr116w.pdf pdf_icon

BCR116S

BCR116... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7 k , R2=47 k ) BCR116S Two internally isolated transistors with good matching in one multichip package BCR116S For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified accordin

 8.1. Size:35K  siemens
bcr116.pdf pdf_icon

BCR116S

BCR 116 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 116 WGs Q62702-C2337 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base

 8.2. Size:34K  siemens
bcr116w.pdf pdf_icon

BCR116S

BCR 116W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 116W WGs UPON INQUIRY 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-ba

Otros transistores... S2SC4617G , S-L2SA2030M3T5G , S-L2SC3837T1G , UD2195 , UMF21N , UMF5N , BCR108F , BCR112W , 2SC1815 , BCR119F , BCR119W , BCR129 , BCR129S , BCR129W , BCR148F , BCR169W , BCR183U .

History: RN49A2

 

 

 


 
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