Биполярный транзистор BCR116S
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BCR116S
Маркировка: WGs
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.1
Максимальная рассеиваемая мощность (Pc): 0.25
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Ёмкость коллекторного перехода (Cc): 3
pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора:
SOT-363
Аналоги (замена) для BCR116S
BCR116S
Datasheet (PDF)
..1. Size:865K infineon
bcr116s.pdf 
BCR116...NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7 k, R2=47 k) BCR116S: Two internally isolated transistors with good matching in one multichip package BCR116S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified accordin
..2. Size:867K infineon
bcr116 bcr116s bcr116w.pdf 
BCR116...NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7 k, R2=47 k) BCR116S: Two internally isolated transistors with good matching in one multichip package BCR116S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified accordin
8.1. Size:35K siemens
bcr116.pdf 
BCR 116NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 116 WGs Q62702-C2337 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base
8.2. Size:34K siemens
bcr116w.pdf 
BCR 116WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 116W WGs UPON INQUIRY 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-ba
9.1. Size:34K siemens
bcr119.pdf 
BCR 119NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 119 WKs Q62702-C2255 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage VEB
9.2. Size:34K siemens
bcr119w.pdf 
BCR 119WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 119W WKs Q62702-C2285 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage
9.3. Size:35K siemens
bcr112.pdf 
BCR 112NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 112 WFs Q62702-C2254 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base
9.4. Size:34K siemens
bcr112w.pdf 
BCR 112WNPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 112W WFs Q62702-C2284 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-b
9.5. Size:42K siemens
bcr119s.pdf 
BCR 119SNPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in one package Built bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 119S WKs Q62702-C2415 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values UnitCollecto
9.6. Size:250K infineon
bcr119w.pdf 
BCR119...NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k) BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR
9.7. Size:834K infineon
bcr112w.pdf 
BCR112...NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=4.7k) Pb-free (RoHS compliant) package Qualified according AEC Q101BCR112BCR112WC3R1R21 2B EEHA07184Type Marking Pin Configuration PackageBCR112 WFs 1=B 2=E 3=C - - - SOT23 BCR112W WFs 1=B 2=E 3=C - - - S
9.8. Size:250K infineon
bcr119f.pdf 
BCR119...NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k) BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR
9.9. Size:253K infineon
bcr119series.pdf 
BCR119...NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k) BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR
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