CHDTA113TKGP Todos los transistores

 

CHDTA113TKGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTA113TKGP
   Código: R1
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de transistor bipolar CHDTA113TKGP

 

CHDTA113TKGP Datasheet (PDF)

 ..1. Size:94K  chenmko
chdta113tkgp.pdf

CHDTA113TKGP CHDTA113TKGP

CHENMKO ENTERPRISE CO.,LTDCHDTA113TKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 5.1. Size:107K  chenmko
chdta113tugp.pdf

CHDTA113TKGP CHDTA113TKGP

CHENMKO ENTERPRISE CO.,LTDCHDTA113TUGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.1. Size:207K  chenmko
chdta113zegp.pdf

CHDTA113TKGP CHDTA113TKGP

CHENMKO ENTERPRISE CO.,LTDCHDTA113ZEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 6.2. Size:283K  chenmko
chdta113zkgp.pdf

CHDTA113TKGP CHDTA113TKGP

CHENMKO ENTERPRISE CO.,LTDCHDTA113ZKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 6.3. Size:214K  chenmko
chdta113zugp.pdf

CHDTA113TKGP CHDTA113TKGP

CHENMKO ENTERPRISE CO.,LTDCHDTA113ZUGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

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