CHDTB143EKGP Todos los transistores

 

CHDTB143EKGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTB143EKGP
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 4.7 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 47
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de transistor bipolar CHDTB143EKGP

 

CHDTB143EKGP Datasheet (PDF)

 ..1. Size:103K  chenmko
chdtb143ekgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB143EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 6.1. Size:111K  chenmko
chdtb143tkgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB143TKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.1. Size:104K  chenmko
chdtb114ekgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB114EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.2. Size:63K  chenmko
chdtb114tkgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB114TKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.3. Size:104K  chenmko
chdtb123ekgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB123EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.4. Size:102K  chenmko
chdtb113zkgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB113ZKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.5. Size:140K  chenmko
chdtb123ykgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB123YKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.6. Size:175K  chenmko
chdtb113ekgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB113EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.7. Size:113K  chenmko
chdtb123tkgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB123TKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.8. Size:58K  chenmko
chdtb122jkgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB122JKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

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History: 2N1247

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