Справочник транзисторов. CHDTB143EKGP

 

Биполярный транзистор CHDTB143EKGP - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: CHDTB143EKGP
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Встроенный резистор цепи смещения R2 = 4.7 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 47
   Корпус транзистора: SOT-23

 Аналоги (замена) для CHDTB143EKGP

 

 

CHDTB143EKGP Datasheet (PDF)

 ..1. Size:103K  chenmko
chdtb143ekgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB143EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 6.1. Size:111K  chenmko
chdtb143tkgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB143TKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.1. Size:104K  chenmko
chdtb114ekgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB114EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.2. Size:63K  chenmko
chdtb114tkgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB114TKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.3. Size:104K  chenmko
chdtb123ekgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB123EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.4. Size:102K  chenmko
chdtb113zkgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB113ZKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.5. Size:140K  chenmko
chdtb123ykgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB123YKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.6. Size:175K  chenmko
chdtb113ekgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB113EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.7. Size:113K  chenmko
chdtb123tkgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB123TKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 8.8. Size:58K  chenmko
chdtb122jkgp.pdf

CHDTB143EKGP
CHDTB143EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTB122JKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

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