CHDTC115EUGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CHDTC115EUGP
   Código: EUF
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 100 kOhm
   Resistencia Base-Emisor R2 = 100 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 82
   Paquete / Cubierta: SOT-323

Búsqueda de reemplazo de transistor bipolar CHDTC115EUGP

CHDTC115EUGP Datasheet (PDF)

..1. Size:103K chenmko
chdtc115eugp.pdf

CHENMKO ENTERPRISE CO.,LTDCHDTC115EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 20 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

5.1. Size:70K chenmko
chdtc115ekgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHDTC115EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 20 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

5.2. Size:54K chenmko
chdtc115eegp.pdf

CHENMKO ENTERPRISE CO.,LTDCHDTC115EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 20 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

6.1. Size:51K chenmko
chdtc115tegp.pdf

CHENMKO ENTERPRISE CO.,LTDCHDTC115TEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

6.2. Size:71K chenmko
chdtc115tugp.pdf

CHENMKO ENTERPRISE CO.,LTDCHDTC115TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

6.3. Size:48K chenmko
chdtc115tkgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHDTC115TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

6.4. Size:146K chenmko
chdtc115gugp.pdf

CHENMKO ENTERPRISE CO.,LTDCHDTC115GUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

6.5. Size:67K chenmko
chdtc115gkgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHDTC115GKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

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