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CHDTC363EUGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTC363EUGP
   Código: EUG
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 6.8 kOhm
   Resistencia Base-Emisor R2 = 6.8 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT-323

 Búsqueda de reemplazo de transistor bipolar CHDTC363EUGP

 

CHDTC363EUGP Datasheet (PDF)

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CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTD CHDTC363EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation

 5.1. Size:139K  chenmko
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CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTD CHDTC363EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi

 6.1. Size:92K  chenmko
chdtc363tkgp.pdf pdf_icon

CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTD CHDTC363TKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 30 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

 8.1. Size:90K  chenmko
chdtc314tkgp.pdf pdf_icon

CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTD CHDTC314TKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 30 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

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History: INC6006AP1 | CHDTC623TUGP | CHT5551GP | CHT4672XGP | CHT857BVGP | 3CG6517 | CHT3019ZGP

 

 
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