CHDTC363EUGP Todos los transistores

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CHDTC363EUGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CHDTC363EUGP

Código: EUG

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 6.8 kOhm

Resistencia Base-Emisor R2 = 6.8 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 200 MHz

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: SOT-323

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CHDTC363EUGP Datasheet (PDF)

1.1. chdtc363eugp.pdf Size:138K _china

CHDTC363EUGP
CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTD CHDTC363EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation

1.2. chdtc363ekgp.pdf Size:139K _china

CHDTC363EUGP
CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTD CHDTC363EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi

 2.1. chdtc363tkgp.pdf Size:92K _china

CHDTC363EUGP
CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTD CHDTC363TKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 30 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

Otros transistores... CHDTC144WEGP , CHDTC144WKGP , CHDTC144WUGP , CHDTC314TKGP , CHDTC314TUGP , CHDTC323TKGP , CHDTC323TUGP , CHDTC363EKGP , S9014 , CHDTC363TKGP , CHDTC614TKGP , CHDTC614TUGP , CHDTC623TKGP , CHEMA11GP , CHEMA2GP , CHEMA3GP , CHEMA4GP .

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