CHDTC363EUGP Todos los transistores

 

CHDTC363EUGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTC363EUGP
   Código: EUG
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 6.8 kOhm
   Resistencia Base-Emisor R2 = 6.8 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT-323
 

 Búsqueda de reemplazo de CHDTC363EUGP

   - Selección ⓘ de transistores por parámetros

 

CHDTC363EUGP Datasheet (PDF)

 ..1. Size:138K  chenmko
 chdtc363eugp.pdf pdf_icon

CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC363EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 5.1. Size:139K  chenmko
 chdtc363ekgp.pdf pdf_icon

CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC363EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 6.1. Size:92K  chenmko
 chdtc363tkgp.pdf pdf_icon

CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC363TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

 8.1. Size:90K  chenmko
 chdtc314tkgp.pdf pdf_icon

CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC314TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC4162M | 2SC4226B | MMBT9014D | CHEMD3GP | TI888

 

 
Back to Top

 


 
.