All Transistors. CHDTC363EUGP Datasheet

 

CHDTC363EUGP Datasheet and Replacement


   Type Designator: CHDTC363EUGP
   SMD Transistor Code: EUG
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 6.8 kOhm
   Built in Bias Resistor R2 = 6.8 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT-323
 

 CHDTC363EUGP Substitution

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CHDTC363EUGP Datasheet (PDF)

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CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC363EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 5.1. Size:139K  chenmko
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CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC363EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 6.1. Size:92K  chenmko
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CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC363TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

 8.1. Size:90K  chenmko
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CHDTC363EUGP

CHENMKO ENTERPRISE CO.,LTDCHDTC314TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

Datasheet: CHDTC144WEGP , CHDTC144WKGP , CHDTC144WUGP , CHDTC314TKGP , CHDTC314TUGP , CHDTC323TKGP , CHDTC323TUGP , CHDTC363EKGP , D882 , CHDTC363TKGP , CHDTC614TKGP , CHDTC614TUGP , CHDTC623TKGP , CHEMA11GP , CHEMA2GP , CHEMA3GP , CHEMA4GP .

History: 2SA2088FRA | MMBTSC1623-L4 | BC319B | DTS721 | CHT5551GP | TA2468A | 2SC5964-TD-E

Keywords - CHDTC363EUGP transistor datasheet

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