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CHDTD123EKGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTD123EKGP
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 39
   Paquete / Cubierta: SOT-23
 

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CHDTD123EKGP Datasheet (PDF)

 ..1. Size:98K  chenmko
 chdtd123ekgp.pdf pdf_icon

CHDTD123EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTD123EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 6.1. Size:103K  chenmko
 chdtd123tkgp.pdf pdf_icon

CHDTD123EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTD123TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 6.2. Size:138K  chenmko
 chdtd123ykgp.pdf pdf_icon

CHDTD123EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTD123YKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 7.1. Size:62K  chenmko
 chdtd122jkgp.pdf pdf_icon

CHDTD123EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTD122JKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

MOSTRAR MÁS

Otros transistores... CHDTC663EKGP , CHDTC663EUGP , CHDTD113EKGP , CHDTD113ZKGP , CHDTD113ZUGP , CHDTD114EKGP , CHDTD114GKGP , CHDTD122JKGP , MJE340 , CHDTD123TKGP , CHDTD123YKGP , CHDTD133HKGP , CHDTD143TKGP , CHEMB10GP , CHEMB11GP , CHEMB2GP , CHEMB3GP .

History: KTX213U

 

 
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