CHEMG1GP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHEMG1GP
Código: G1
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta: SOT-553
Búsqueda de reemplazo de CHEMG1GP
CHEMG1GP Datasheet (PDF)
chemg1gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHEMG1GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current c
chemg11gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHEMG11GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current
chemg5gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHEMG5GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current c
chemg9gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHEMG9GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current
Otros transistores... CHEMD2GP , CHEMD37GP , CHEMD3GP , CHEMD4GP , CHEMD5GP , CHEMD8GP , CHEMD9GP , CHEMG11GP , 2SC2655 , CHEMG2GP , CHEMG3GP , CHEMG4GP , CHEMG5GP , CHEMG6GP , CHEMG8GP , CHEMG9GP , CHEMH10GP .
History: E20232 | 2SD1735 | 2SC292 | 3DD159D | E6008 | 2SC4222 | CD2089
History: E20232 | 2SD1735 | 2SC292 | 3DD159D | E6008 | 2SC4222 | CD2089



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