Справочник транзисторов. CHEMG1GP

 

Биполярный транзистор CHEMG1GP - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: CHEMG1GP
   Маркировка: G1
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 22 kOhm
   Встроенный резистор цепи смещения R2 = 22 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.03 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 56
   Корпус транзистора: SOT-553

 Аналоги (замена) для CHEMG1GP

 

 

CHEMG1GP Datasheet (PDF)

 ..1. Size:83K  chenmko
chemg1gp.pdf

CHEMG1GP
CHEMG1GP

CHENMKO ENTERPRISE CO.,LTDCHEMG1GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current c

 8.1. Size:131K  chenmko
chemg11gp.pdf

CHEMG1GP
CHEMG1GP

CHENMKO ENTERPRISE CO.,LTDCHEMG11GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current

 9.1. Size:79K  chenmko
chemg5gp.pdf

CHEMG1GP
CHEMG1GP

CHENMKO ENTERPRISE CO.,LTDCHEMG5GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current c

 9.2. Size:90K  chenmko
chemg9gp.pdf

CHEMG1GP
CHEMG1GP

CHENMKO ENTERPRISE CO.,LTDCHEMG9GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current

 9.3. Size:156K  chenmko
chemg4gp.pdf

CHEMG1GP
CHEMG1GP

CHENMKO ENTERPRISE CO.,LTDCHEMG4GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current

 9.4. Size:154K  chenmko
chemg6gp.pdf

CHEMG1GP
CHEMG1GP

CHENMKO ENTERPRISE CO.,LTDCHEMG6GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current

 9.5. Size:139K  chenmko
chemg8gp.pdf

CHEMG1GP
CHEMG1GP

CHENMKO ENTERPRISE CO.,LTDCHEMG8GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current c

 9.6. Size:83K  chenmko
chemg2gp.pdf

CHEMG1GP
CHEMG1GP

CHENMKO ENTERPRISE CO.,LTDCHEMG2GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current c

 9.7. Size:116K  chenmko
chemg3gp.pdf

CHEMG1GP
CHEMG1GP

CHENMKO ENTERPRISE CO.,LTDCHEMG3GPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current

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