DMC56205 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMC56205

Código: K3

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 160

Encapsulados: SMINI5-F3-B

 Búsqueda de reemplazo de DMC56205

- Selecciónⓘ de transistores por parámetros

 

DMC56205 datasheet

 ..1. Size:369K  panasonic
dmc56205.pdf pdf_icon

DMC56205

This product complies with the RoHS Directive (EU 2002/95/EC). DMC56205 Silicon NPN epitaxial planar type For digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec

 7.1. Size:364K  panasonic
dmc56201.pdf pdf_icon

DMC56205

This product complies with the RoHS Directive (EU 2002/95/EC). DMC56201 Silicon NPN epitaxial planar type For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini5-F3-B Eco-friendly Halogen-free package Pin Name 1 Emitter (Tr1) 4 Collector (

 7.2. Size:366K  panasonic
dmc56200.pdf pdf_icon

DMC56205

This product complies with the RoHS Directive (EU 2002/95/EC). DMC56200 Silicon NPN epitaxial planar type For digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec

 9.1. Size:506K  fairchild semi
fdmc5614p.pdf pdf_icon

DMC56205

September 2010 FDMC5614P tm P-Channel PowerTrench MOSFET -60V, -13.5A, 100m Features General Description Max rDS(on) = 100m at VGS = -10V, ID = -5.7A This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been Max rDS(on) = 135m at VGS = -4.5V, ID = -4.4A optimized for power management applications requiring a wi

Otros transistores... DMC56106, DMC56107, DMC5610E, DMC5610L, DMC5610M, DMC5610N, DMC56200, DMC56201, 2SB817, DMC56400, DMC56401, DMC56402, DMC56403, DMC56404, DMC56405, DMC56406, DMC56407