All Transistors. DMC56205 Datasheet

 

DMC56205 Datasheet and Replacement


   Type Designator: DMC56205
   SMD Transistor Code: K3
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SMINI5-F3-B
      - BJT Cross-Reference Search

   

DMC56205 Datasheet (PDF)

 ..1. Size:369K  panasonic
dmc56205.pdf pdf_icon

DMC56205

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56205Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec

 7.1. Size:364K  panasonic
dmc56201.pdf pdf_icon

DMC56205

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56201Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini5-F3-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Collector (

 7.2. Size:366K  panasonic
dmc56200.pdf pdf_icon

DMC56205

This product complies with the RoHS Directive (EU 2002/95/EC).DMC56200Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini5-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Ec

 9.1. Size:506K  fairchild semi
fdmc5614p.pdf pdf_icon

DMC56205

September 2010FDMC5614PtmP-Channel PowerTrench MOSFET -60V, -13.5A, 100mFeatures General Description Max rDS(on) = 100m at VGS = -10V, ID = -5.7AThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been Max rDS(on) = 135m at VGS = -4.5V, ID = -4.4Aoptimized for power management applications requiring a wi

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SB464 | 2SC1481 | 2SA843 | 2SA1051A | 2SD1306 | MMBT4122 | 2N1963

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