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DMG56401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMG56401
   Código: E6
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: SMINI6-F3-B
     - Selección de transistores por parámetros

 

DMG56401 Datasheet (PDF)

 ..1. Size:474K  panasonic
 dmg56401.pdf pdf_icon

DMG56401

This product complies with the RoHS Directive (EU 2002/95/EC).DMG56401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26401 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco

 7.1. Size:480K  panasonic
 dmg56405.pdf pdf_icon

DMG56401

This product complies with the RoHS Directive (EU 2002/95/EC).DMG56405Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26405 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contri

 7.2. Size:474K  panasonic
 dmg56406.pdf pdf_icon

DMG56401

This product complies with the RoHS Directive (EU 2002/95/EC).DMG56406Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26406 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contri

 7.3. Size:488K  panasonic
 dmg5640n.pdf pdf_icon

DMG56401

This product complies with the RoHS Directive (EU 2002/95/EC).DMG5640NSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reduction of component c

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BC848CW-G | 2SA1706T-AN | RT3YB7M | 3DG2413K | 2SA815 | 2SA795A

 

 
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