All Transistors. DMG56401 Datasheet

 

DMG56401 Datasheet and Replacement


   Type Designator: DMG56401
   SMD Transistor Code: E6
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: SMINI6-F3-B
      - BJT Cross-Reference Search

   

DMG56401 Datasheet (PDF)

 ..1. Size:474K  panasonic
 dmg56401.pdf pdf_icon

DMG56401

This product complies with the RoHS Directive (EU 2002/95/EC).DMG56401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26401 in SMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini6-F3-B Eco

 7.1. Size:480K  panasonic
 dmg56405.pdf pdf_icon

DMG56401

This product complies with the RoHS Directive (EU 2002/95/EC).DMG56405Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26405 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contri

 7.2. Size:474K  panasonic
 dmg56406.pdf pdf_icon

DMG56401

This product complies with the RoHS Directive (EU 2002/95/EC).DMG56406Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG26406 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contri

 7.3. Size:488K  panasonic
 dmg5640n.pdf pdf_icon

DMG56401

This product complies with the RoHS Directive (EU 2002/95/EC).DMG5640NSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SMini6-F3-B Contributes to miniaturization of sets, reduction of component c

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB744A | BDW24 | MMBT3906HE3 | BC847RA | 2N332A | 2N2874 | PT902

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