DRA2123J Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA2123J
Código: L4
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 80
Encapsulados: MINI3-G3-B
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DRA2123J datasheet
dra2123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRA2123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123J Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1 Ba
dra2123y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRA2123Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123Y Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1 Ba
dra2123e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRA2123E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1 Base Embossed type (Thermo-compression se
dra2124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DRA2124T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2124T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c
Otros transistores... DRA2113Z, DRA2114E, DRA2114T, DRA2114Y, DRA2115E, DRA2115G, DRA2115T, DRA2123E, BC558, DRA2123Y, DRA2124E, DRA2124T, DRA2124X, DRA2143E, DRA2143T, DRA2143X, DRA2143Y
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