DRA2123J . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA2123J
Código: L4
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: MINI3-G3-B
Búsqueda de reemplazo de transistor bipolar DRA2123J
DRA2123J Datasheet (PDF)
dra2123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2123J Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba
dra2123y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2123YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2123Y Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba
dra2123e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2123ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2123E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression se
dra2124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2124T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c
dra2124x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2124XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2124X Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name E
dra2124e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2124E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
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