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DRA2123J . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DRA2123J
   Código: L4
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: MINI3-G3-B
 

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DRA2123J Datasheet (PDF)

 ..1. Size:347K  panasonic
 dra2123j.pdf pdf_icon

DRA2123J

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2123J Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba

 7.1. Size:349K  panasonic
 dra2123y.pdf pdf_icon

DRA2123J

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2123YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2123Y Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba

 7.2. Size:306K  panasonic
 dra2123e.pdf pdf_icon

DRA2123J

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2123ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2123E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression se

 8.1. Size:353K  panasonic
 dra2124t.pdf pdf_icon

DRA2123J

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2124T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c

MOSTRAR MÁS

Otros transistores... DRA2113Z , DRA2114E , DRA2114T , DRA2114Y , DRA2115E , DRA2115G , DRA2115T , DRA2123E , 9014 , DRA2123Y , DRA2124E , DRA2124T , DRA2124X , DRA2143E , DRA2143T , DRA2143X , DRA2143Y .

History: KT209D | OC81DM | GE6061 | 2SC779 | FM709

 

 
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