DRA2123J Datasheet, Equivalent, Cross Reference Search
Type Designator: DRA2123J
SMD Transistor Code: L4
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: MINI3-G3-B
DRA2123J Transistor Equivalent Substitute - Cross-Reference Search
DRA2123J Datasheet (PDF)
dra2123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2123J Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba
dra2123y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2123YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2123Y Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba
dra2123e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2123ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2123E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression se
dra2124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2124T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c
dra2124x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2124XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2124X Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name E
dra2124e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC2124E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
