DRA3115E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DRA3115E

Código: LN

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 100 kOhm

Resistencia Base-Emisor R2 = 100 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SSSMINI3-F2-B

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DRA3115E datasheet

 ..1. Size:424K  panasonic
dra3115e.pdf pdf_icon

DRA3115E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA3115E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3115E DRA9115E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halogen-

 7.1. Size:416K  panasonic
dra3115g.pdf pdf_icon

DRA3115E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA3115G Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3115G DRA9115G in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge

 7.2. Size:422K  panasonic
dra3115t.pdf pdf_icon

DRA3115E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA3115T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3115T DRA9115T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniatu

 8.1. Size:417K  panasonic
dra3114e.pdf pdf_icon

DRA3115E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA3114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3114E DRA9114E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge

Otros transistores... DRA2523Y, DRA2533Q, DRA2543E, DRA2L14Y, DRA3113Z, DRA3114E, DRA3114T, DRA3114Y, BC549, DRA3115G, DRA3115T, DRA3123E, DRA3123J, DRA3123Y, DRA3124E, DRA3124T, DRA3124X