Биполярный транзистор DRA3115E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRA3115E
Маркировка: LN
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 100 kOhm
Встроенный резистор цепи смещения R2 = 100 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SSSMINI3-F2-B
DRA3115E Datasheet (PDF)
dra3115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3115EDRA9115E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halogen-
dra3115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3115GSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3115GDRA9115G in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
dra3115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3115TDRA9115T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniatu
dra3114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3114EDRA9114E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
dra3114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3114TDRA9114T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturi
dra3114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3114YDRA9114Y in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halogen-
dra3113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA3113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3113ZDRA9113Z in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050