DRA4143X Todos los transistores

 

DRA4143X . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DRA4143X
   Código: L6
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: NS-B2-B-B
 

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DRA4143X Datasheet (PDF)

 ..1. Size:224K  panasonic
 dra4143x.pdf pdf_icon

DRA4143X

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4143XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4143XDRA2143X in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

 7.1. Size:221K  panasonic
 dra4143t.pdf pdf_icon

DRA4143X

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4143TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4143TDRA2143T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

 7.2. Size:224K  panasonic
 dra4143z.pdf pdf_icon

DRA4143X

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4143ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4143ZDRA2143Z in NS through hole type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniaturization of sets, mount ar

 7.3. Size:346K  panasonic
 dra4143e.pdf pdf_icon

DRA4143X

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4143ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4143EDRA2143E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

MOSTRAR MÁS

Otros transistores... DRA4114T , DRA4114Y , DRA4123J , DRA4123Y , DRA4124E , DRA4124T , DRA4143E , DRA4143T , 2SA1943 , DRA4143Z , DRA4144E , DRA4144T , DRA4144V , DRA4144W , DRA4152Z , DRA4514E , DRA4523E .

History: MPS6568

 

 
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