DRA4143X Datasheet. Specs and Replacement

Type Designator: DRA4143X

SMD Transistor Code: L6

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: NS-B2-B-B

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DRA4143X datasheet

 ..1. Size:224K  panasonic

dra4143x.pdf pdf_icon

DRA4143X

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143X Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143X DRA2143X in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p... See More ⇒

 7.1. Size:221K  panasonic

dra4143t.pdf pdf_icon

DRA4143X

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143T DRA2143T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat... See More ⇒

 7.2. Size:224K  panasonic

dra4143z.pdf pdf_icon

DRA4143X

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143Z DRA2143Z in NS through hole type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniaturization of sets, mount ar... See More ⇒

 7.3. Size:346K  panasonic

dra4143e.pdf pdf_icon

DRA4143X

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4143E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143E DRA2143E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free... See More ⇒

Detailed specifications: DRA4114T, DRA4114Y, DRA4123J, DRA4123Y, DRA4124E, DRA4124T, DRA4143E, DRA4143T, TIP122, DRA4143Z, DRA4144E, DRA4144T, DRA4144V, DRA4144W, DRA4152Z, DRA4514E, DRA4523E

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