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DRA5113Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DRA5113Z
   Código: L1
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SMINI3-F2-B
 

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DRA5113Z Datasheet (PDF)

 ..1. Size:414K  panasonic
 dra5113z.pdf pdf_icon

DRA5113Z

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5113ZDRA2113Z in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr

 8.1. Size:418K  panasonic
 dra5115t.pdf pdf_icon

DRA5113Z

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5115TDRA2115T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati

 8.2. Size:414K  panasonic
 dra5114t.pdf pdf_icon

DRA5113Z

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114TDRA2114T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati

 8.3. Size:414K  panasonic
 dra5114e.pdf pdf_icon

DRA5113Z

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114EDRA2114E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free

MOSTRAR MÁS

Otros transistores... DRA4144T , DRA4144V , DRA4144W , DRA4152Z , DRA4514E , DRA4523E , DRA4523Y , DRA4543E , 100DA025D , DRA5114E , DRA5114T , DRA5114Y , DRA5115E , DRA5115G , DRA5115T , DRA5123E , DRA5123J .

History: 2SC5052 | 2SC945O | BCP669A | NTE20 | HSE104 | BCP56L3 | DRC4114T

 

 
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