DRA5115E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA5115E
Código: LN
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 100 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SMINI3-F2-B
Búsqueda de reemplazo de transistor bipolar DRA5115E
DRA5115E Datasheet (PDF)
dra5115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5115EDRA2115E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
dra5115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5115TDRA2115T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati
dra5115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5115GSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5115GDRA2115G in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
dra5114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114TDRA2114T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati
dra5114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114EDRA2114E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free
dra5114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114YDRA2114Y in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free
dra5113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA5113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5113ZDRA2113Z in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
