DRA5115E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DRA5115E

Código: LN

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 100 kOhm

Resistencia Base-Emisor R2 = 100 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SMINI3-F2-B

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DRA5115E datasheet

 ..1. Size:420K  panasonic
 dra5115e.pdf pdf_icon

DRA5115E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA5115E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5115E DRA2115E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr

 7.1. Size:418K  panasonic
 dra5115t.pdf pdf_icon

DRA5115E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA5115T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5115T DRA2115T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati

 7.2. Size:413K  panasonic
 dra5115g.pdf pdf_icon

DRA5115E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA5115G Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5115G DRA2115G in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-fr

 8.1. Size:414K  panasonic
 dra5114t.pdf pdf_icon

DRA5115E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA5114T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5114T DRA2114T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati

MOSTRAR MÁS

Otros transistores... DRA4514E, DRA4523E, DRA4523Y, DRA4543E, DRA5113Z, DRA5114E, DRA5114T, DRA5114Y, 2SD1047, DRA5115G, DRA5115T, DRA5123E, DRA5123J, DRA5123Y, DRA5124E, DRA5124T, DRA5124X