DRA9123J . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRA9123J
Código: L4
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.125 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SSMINI3-F3-B
Búsqueda de reemplazo de transistor bipolar DRA9123J
DRA9123J Datasheet (PDF)
dra9123j.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9123JSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9123JDRA5123J in SSMini3 type package Package Features Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco-f
dra9123e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9123ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9123EDRA5123E in SSMini3 type package Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package SSMini3-F3-B Pin Name Packaging 1: Base 2:
dra9123y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9123YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9123YDRA5123Y in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr
dra9124t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9124TDRA5124T in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturiza
dra9124x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA9124XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9124XDRA5124X in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini3-F3-B Contributes to miniaturizati
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N2274
History: 2N2274
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050