DRAF115E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DRAF115E
Código: LN
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 100 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: ML3-N4-B
Búsqueda de reemplazo de transistor bipolar DRAF115E
DRAF115E Datasheet (PDF)
draf115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF115EDRA3115E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka
draf113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF113ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF113ZDRA3113Z in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac
draf114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF114TDRA3114T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of
draf114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF114EDRA3114E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac
draf114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF114YDRA3114Y in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BC546CTA | 2SA803 | 2N1565
History: BC546CTA | 2SA803 | 2N1565
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050