DRC3115G Todos los transistores

 

DRC3115G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DRC3115G
   Código: NX
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia Base-Emisor R2 = 100 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SSSMINI3-F2-B
     - Selección de transistores por parámetros

 

DRC3115G Datasheet (PDF)

 ..1. Size:411K  panasonic
 drc3115g.pdf pdf_icon

DRC3115G

This product complies with the RoHS Directive (EU 2002/95/EC).DRC3115GSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3115GDRC9115G in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge

 7.1. Size:414K  panasonic
 drc3115t.pdf pdf_icon

DRC3115G

This product complies with the RoHS Directive (EU 2002/95/EC).DRC3115TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3115TDRC9115T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturi

 7.2. Size:418K  panasonic
 drc3115e.pdf pdf_icon

DRC3115G

This product complies with the RoHS Directive (EU 2002/95/EC).DRC3115ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3115EDRC9115E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge

 8.1. Size:415K  panasonic
 drc3114t.pdf pdf_icon

DRC3115G

This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114TDRC9114T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturiza

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 5302D | GA4F3P | HA7533

 

 
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