DRCQA52Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DRCQA52Z
   Código: J1
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 0.51 kOhm
   Resistencia Base-Emisor R2 = 5.1 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.08 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: USSMINI3-F1-B

Búsqueda de reemplazo de transistor bipolar DRCQA52Z

DRCQA52Z Datasheet (PDF)

..1. Size:234K panasonic
drcqa52z.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA52ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA52ZDRC3152Z in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Halogen-

9.1. Size:232K panasonic
drcqa24t.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA24TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA24TDRC3124T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu

9.2. Size:231K panasonic
drcqa44t.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA44TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA44TDRC3144T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu

9.3. Size:235K panasonic
drcqa24x.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA24XSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA24XDRC3124X in USSMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturization of sets, reduction o

9.4. Size:233K panasonic
drcqa23e.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA23ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA23EDRC3123E in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Halogen-

9.5. Size:353K panasonic
drcqa44e.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA44ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA44EDRC3A44E in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Halogen-

9.6. Size:231K panasonic
drcqa15t.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA15TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA15TDRC3115T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: KT876V

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050