DRCQA52Z Datasheet, Equivalent, Cross Reference Search
Type Designator: DRCQA52Z
SMD Transistor Code: J1
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 0.51 kOhm
Built in Bias Resistor R2 = 5.1 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.08
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: USSMINI3-F1-B
DRCQA52Z Transistor Equivalent Substitute - Cross-Reference Search
DRCQA52Z Datasheet (PDF)
drcqa52z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA52ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA52ZDRC3152Z in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Halogen-
drcqa24t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA24TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA24TDRC3124T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu
drcqa44t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA44TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA44TDRC3144T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu
drcqa24x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA24XSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA24XDRC3124X in USSMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturization of sets, reduction o
drcqa23e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA23ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA23EDRC3123E in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Halogen-
drcqa44e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA44ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA44EDRC3A44E in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Halogen-
drcqa15t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA15TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA15TDRC3115T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
