DTA113EET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA113EET1G
Código: 6G
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 1 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 3
Paquete / Cubierta: SC-75
Búsqueda de reemplazo de transistor bipolar DTA113EET1G
DTA113EET1G Datasheet (PDF)
dta113ee dta113eet1g dta113em3 dta113em3t5g.pdf
MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)
mun2130 mmun2130l mun5130 dta113ee dta113em3 nsba113ef3.pdf
MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)
pdta113e ser.pdf
PDTA113E seriesPNP resistor-equipped transistors; R1 = 1 k, R2 = 1 kRev. 05 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPNcomplementNXP JEITA JEDECPDTA113EE SOT416 SC-75 - PDTC113EEPDTA113EK SOT346 SC-59A TO-236 PDTC113EKPDTA113EM SOT883 SC-101
pdta113ek pdta113es.pdf
PDTA113E seriesPNP resistor-equipped transistors; R1 = 1 k, R2 = 1 kRev. 05 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPNcomplementNXP JEITA JEDECPDTA113EE SOT416 SC-75 - PDTC113EEPDTA113EK SOT346 SC-59A TO-236 PDTC113EKPDTA113EM SOT883 SC-101
pdta113e.pdf
PDTA113E seriesPNP resistor-equipped transistors; R1 = 1 k, R2 = 1 kRev. 05 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPNcomplementNXP JEITA JEDECPDTA113EE SOT416 SC-75 - PDTC113EEPDTA113EK SOT346 SC-59A TO-236 PDTC113EKPDTA113EM SOT883 SC-101
nsvdta113em3t5g.pdf
MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N5189 | 2SB1557
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050