Справочник транзисторов. DTA113EET1G

 

Биполярный транзистор DTA113EET1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTA113EET1G
   Маркировка: 6G
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 1 kOhm
   Встроенный резистор цепи смещения R2 = 1 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 3
   Корпус транзистора: SC-75

 Аналоги (замена) для DTA113EET1G

 

 

DTA113EET1G Datasheet (PDF)

 ..1. Size:110K  onsemi
 dta113ee dta113eet1g dta113em3 dta113em3t5g.pdf

DTA113EET1G DTA113EET1G

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)

 6.1. Size:450K  onsemi
 mun2130 mmun2130l mun5130 dta113ee dta113em3 nsba113ef3.pdf

DTA113EET1G DTA113EET1G

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)

 7.1. Size:113K  philips
 pdta113e ser.pdf

DTA113EET1G DTA113EET1G

PDTA113E seriesPNP resistor-equipped transistors; R1 = 1 k, R2 = 1 kRev. 05 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPNcomplementNXP JEITA JEDECPDTA113EE SOT416 SC-75 - PDTC113EEPDTA113EK SOT346 SC-59A TO-236 PDTC113EKPDTA113EM SOT883 SC-101

 7.2. Size:113K  nxp
 pdta113ek pdta113es.pdf

DTA113EET1G DTA113EET1G

PDTA113E seriesPNP resistor-equipped transistors; R1 = 1 k, R2 = 1 kRev. 05 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPNcomplementNXP JEITA JEDECPDTA113EE SOT416 SC-75 - PDTC113EEPDTA113EK SOT346 SC-59A TO-236 PDTC113EKPDTA113EM SOT883 SC-101

 7.3. Size:113K  nxp
 pdta113e.pdf

DTA113EET1G DTA113EET1G

PDTA113E seriesPNP resistor-equipped transistors; R1 = 1 k, R2 = 1 kRev. 05 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPNcomplementNXP JEITA JEDECPDTA113EE SOT416 SC-75 - PDTC113EEPDTA113EK SOT346 SC-59A TO-236 PDTC113EKPDTA113EM SOT883 SC-101

 7.4. Size:110K  onsemi
 nsvdta113em3t5g.pdf

DTA113EET1G DTA113EET1G

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)

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