DTA114TEB Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA114TEB
Código: 94
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 100
Encapsulados: SC-89
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DTA114TEB datasheet
..1. Size:1464K rohm
dta114teb dta114tefra dta114tkafra dta114tmfha dta114tuafra dta114tub.pdf 
DTA114T series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCEO -50V IC -100mA R1 10k DTA114TM DTA114TEB (SC-105AA) (SC-89) EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTA114TE DTA114TUB
6.1. Size:29K motorola
pdta114te sot416.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114TE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE FEATURES Built-in bias resistor R1 (typ. 10 k ) Simplification of circuit design R
6.2. Size:52K motorola
pdta114te 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114TE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE FEATURES Built-in bias resistor R1 (typ. 10 k ) Simplification of circuit design R
6.3. Size:52K philips
pdta114te 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114TE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE FEATURES Built-in bias resistor R1 (typ. 10 k ) Simplification of circuit design R
6.4. Size:56K rohm
dta114te.pdf
Transistors Digital transistors (built in resistor) DTA114TE / DTA114TUA / DTA114TKA / DTA114TSA FFeatures FExternal dimensions (Units mm) 1) Built-in circuit enables the configu- ration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive biasing
6.5. Size:57K rohm
dta114te-tua-tka 94 sot416 323 346.pdf
Transistors Digital transistors (built in resistor) DTA114TE / DTA114TUA / DTA114TKA / DTA114TSA FFeatures FExternal dimensions (Units mm) 1) Built-in circuit enables the configu- ration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive biasing
6.6. Size:226K diodes
ddta113te ddta123te ddta143te ddta114te ddta124te ddta144te ddta115te ddta125te.pdf
DDTA (R1-ONLY SERIES) E DDTA (R1-ONLY SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) C Built-In Biasing Resistor, R1 only SOT-523 Lead Free/RoHS Compliant (Note 2) B C TOP VIEW "Green" Device (Note 3 and 4) Dim Min Max Typ B E A 0.15 0.30 0.22 Mecha
6.7. Size:183K mcc
dta114te.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth DTA114TE Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating PNP Digital Transistor Moisure Sensitivity Level 1 Built-in b
6.8. Size:222K onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf
DTA114EET1 Series, SDTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias PNP SIL
6.9. Size:729K htsemi
dta114tca dta114te dta114tsa dta114tua.pdf
DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA/DTA114TCA TRANSISTOR(PNP) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting ex temal input resistors. The bias resistors conisit of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely Eliminating parasi
6.10. Size:294K willas
dta114te.pdf
FM120-M WILLAS DTA114TE THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board space
6.11. Size:770K lrc
ldta114eet1g ldta114tet1g ldta124xet1g ldta143eet1g ldta144eet1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series S-LDTC114EET1G Series NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons
6.13. Size:117K chenmko
chdta114tegp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTA114TEGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. 0.1 0.2 0.05 * H
Otros transistores... DTA114EKAFRA, DTA114EM3, DTA114EM3T5G, DTA114EMFHA, DTA114EN3, DTA114ES3, DTA114EUAFRA, DTA114GUA, TIP31C, DTA114TEFRA, DTA114TET1G, DTA114TKAFRA, DTA114TM3, DTA114TM3T5G, DTA114TMFHA, DTA114TN3, DTA114TUAFRA
