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DTA114YET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTA114YET1G
   Código: 6D
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SC-75

 Búsqueda de reemplazo de transistor bipolar DTA114YET1G

 

DTA114YET1G Datasheet (PDF)

 ..1. Size:222K  onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf

DTA114YET1G DTA114YET1G

DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 0.1. Size:222K  onsemi
sdta114yet1g.pdf

DTA114YET1G DTA114YET1G

DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 0.2. Size:768K  lrc
ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf

DTA114YET1G DTA114YET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors

 6.1. Size:139K  motorola
dta114yerev1.pdf

DTA114YET1G DTA114YET1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTA114YE/DDTA114YEPreliminary Data SheetBias Resistor TransistorPNP Silicon Surface Mount Transistor with3Monolithic Bias Resistor Network2The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic1bias network consisting of two resistors; a series base resistor and a baseemitterresis

 6.2. Size:91K  motorola
dta114ye 59 sot416.pdf

DTA114YET1G DTA114YET1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTA114YE/DDTA114YEPreliminary Data SheetBias Resistor TransistorPNP Silicon Surface Mount Transistor with3Monolithic Bias Resistor Network2The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic1bias network consisting of two resistors; a series base resistor and a baseemitterresis

 6.3. Size:858K  nxp
pdta114ye pdta114ym pdta114yt pdta114yu.pdf

DTA114YET1G DTA114YET1G

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.4. Size:69K  rohm
dta114ye-yua-yka 54sot416 323 346 dta114ysa.pdf

DTA114YET1G DTA114YET1G

TransistorsDigital transistors (built-in resistors)DTA114YE / DTA114YUA / DTA114YKA /DTA114YSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive bi

 6.5. Size:69K  rohm
dta114ye.pdf

DTA114YET1G DTA114YET1G

TransistorsDigital transistors (built-in resistors)DTA114YE / DTA114YUA / DTA114YKA /DTA114YSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive bi

 6.6. Size:1538K  rohm
dta114yefra dta114ykafra dta114yuafra.pdf

DTA114YET1G DTA114YET1G

DTA114Y seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC-50VIC(MAX.)-100mA R110kDTA114YM DTA114YEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTA114YE DTA

 6.7. Size:93K  diodes
ddta114ye.pdf

DTA114YET1G DTA114YET1G

DDTA (R1R2 SERIES) PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary NPN Types Available (DDTC) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors, R1R2 Moisture Sensitivity: L

 6.8. Size:493K  htsemi
dta114yca dta114ye dta114ysa dta114yua.pdf

DTA114YET1G DTA114YET1G

DTA114YE/DTA114YUA/DTA114YKA /DTA114YSA/DTA114YCA TRANSISTOR(PNP)FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost completely

 6.9. Size:78K  chenmko
chdta114yept.pdf

DTA114YET1G DTA114YET1G

CHENMKO ENTERPRISE CO.,LTDCHDTA114YEPTSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.0.10.20.05* Hi

 6.10. Size:97K  chenmko
chdta114yegp.pdf

DTA114YET1G DTA114YET1G

CHENMKO ENTERPRISE CO.,LTDCHDTA114YEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 6.11. Size:3628K  msksemi
dta114ye-ms.pdf

DTA114YET1G DTA114YET1G

www.msksemi.comDTA114YE-MSSemiconductor CompianceSemiconductor CompianceFEATURES: Built-in resistors enable the configurationof a inverter circuit without connectingexternal input resistors. The bias resistors consist of thin-film resistors1. IN2. GNDwith complete isolation to allow positive biasing3. OUTof the input. They also have the advantage ofSOT-523al

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