All Transistors. DTA114YET1G Datasheet

 

DTA114YET1G Datasheet and Replacement


   Type Designator: DTA114YET1G
   SMD Transistor Code: 6D
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-75
 

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DTA114YET1G Datasheet (PDF)

 ..1. Size:222K  onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf pdf_icon

DTA114YET1G

DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 0.1. Size:222K  onsemi
sdta114yet1g.pdf pdf_icon

DTA114YET1G

DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 0.2. Size:768K  lrc
ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf pdf_icon

DTA114YET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors

 6.1. Size:139K  motorola
dta114yerev1.pdf pdf_icon

DTA114YET1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTA114YE/DDTA114YEPreliminary Data SheetBias Resistor TransistorPNP Silicon Surface Mount Transistor with3Monolithic Bias Resistor Network2The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic1bias network consisting of two resistors; a series base resistor and a baseemitterresis

Datasheet: DTA114TM3 , DTA114TM3T5G , DTA114TMFHA , DTA114TN3 , DTA114TUAFRA , DTA114TUB , DTA114YC3 , DTA114YEFRA , 2N2222A , DTA114YKAFRA , DTA114YM3 , DTA114YM3T5G , DTA114YMFHA , DTA114YN3 , DTA114YS3 , DTA114YUAFRA , DTA115EEFRA .

History: KA4L4K | BDW84 | RN2966FS | BD241F | BCW91KA | GF132 | NKT227

Keywords - DTA114YET1G transistor datasheet

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