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DTA124EET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTA124EET1G
   Código: 6B
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SC-75
     - Selección de transistores por parámetros

 

DTA124EET1G Datasheet (PDF)

 ..1. Size:222K  onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf pdf_icon

DTA124EET1G

DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 0.1. Size:768K  lrc
ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf pdf_icon

DTA124EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors

 6.1. Size:57K  motorola
pdta124ee 2.pdf pdf_icon

DTA124EET1G

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design

 6.2. Size:57K  philips
pdta124ee 2.pdf pdf_icon

DTA124EET1G

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design

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History: BUX85G | NJVMJD350T4G | BSP19AT1 | DMG26301 | K2121B | IMB3AFRA | PZT951

 

 
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