Справочник транзисторов. DTA124EET1G

 

Биполярный транзистор DTA124EET1G Даташит. Аналоги


   Наименование производителя: DTA124EET1G
   Маркировка: 6B
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 22 kOhm
   Встроенный резистор цепи смещения R2 = 22 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: SC-75
 

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DTA124EET1G Datasheet (PDF)

 ..1. Size:222K  onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdfpdf_icon

DTA124EET1G

DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 0.1. Size:768K  lrc
ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdfpdf_icon

DTA124EET1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors

 6.1. Size:57K  motorola
pdta124ee 2.pdfpdf_icon

DTA124EET1G

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design

 6.2. Size:57K  philips
pdta124ee 2.pdfpdf_icon

DTA124EET1G

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA124EEPNP resistor-equipped transistorProduct specification 1998 Jul 23Supersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design

Другие транзисторы... DTA123TN3 , DTA123YC3 , DTA123YEFRA , DTA123YKAFRA , DTA123YN3 , DTA123YS3 , DTA123YUAFRA , DTA124EEFRA , TIP32C , DTA124EKAFRA , DTA124EM3 , DTA124EM3T5G , DTA124EMFHA , DTA124EN3 , DTA124ES3 , DTA124EUAFRA , DTA124TE .

 

 
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