DTA124EET1G. Аналоги и основные параметры

Наименование производителя: DTA124EET1G

Маркировка: 6B

Тип материала: Si

Полярность: Pre-Biased-PNP

Встроенный резистор цепи смещения R1 = 22 kOhm

Встроенный резистор цепи смещения R2 = 22 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 60

Корпус транзистора: SC-75

 Аналоги (замена) для DTA124EET1G

- подборⓘ биполярного транзистора по параметрам

 

DTA124EET1G даташит

 ..1. Size:222K  onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdfpdf_icon

DTA124EET1G

DTA114EET1 Series, SDTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 0.1. Size:768K  lrc
ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdfpdf_icon

DTA124EET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors

 6.1. Size:57K  motorola
pdta124ee 2.pdfpdf_icon

DTA124EET1G

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124EE PNP resistor-equipped transistor Product specification 1998 Jul 23 Supersedes data of 1997 Jul 04 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification of circuit design

 6.2. Size:57K  philips
pdta124ee 2.pdfpdf_icon

DTA124EET1G

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124EE PNP resistor-equipped transistor Product specification 1998 Jul 23 Supersedes data of 1997 Jul 04 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification of circuit design

Другие транзисторы: DTA123TN3, DTA123YC3, DTA123YEFRA, DTA123YKAFRA, DTA123YN3, DTA123YS3, DTA123YUAFRA, DTA124EEFRA, 431, DTA124EKAFRA, DTA124EM3, DTA124EM3T5G, DTA124EMFHA, DTA124EN3, DTA124ES3, DTA124EUAFRA, DTA124TE