2SA1011D Todos los transistores

 

2SA1011D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1011D
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 180 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

2SA1011D Datasheet (PDF)

 7.1. Size:42K  sanyo
 2sa1011 2sc2344.pdf pdf_icon

2SA1011D

Ordering number:ENN544GPNP/NPN Epitaxial Planar Silicon Transistors2SA1011/2SC2344High-Voltage Switching, AF Power Amp,100W Output Predriver ApplicationsPackage Dimensionsunit:mm2010C[2SA1011/2SC2344]10.24.53.65.11.31.20.80.41 2 31 : Base( ) : 2SA10112 : Collector3 : Emitter2.55 2.55SpecificationsSANYO : TO220ABAbsolute Maximum Ratings at Ta = 2

 7.2. Size:211K  jmnic
 2sa1011.pdf pdf_icon

2SA1011D

JMnic Product Specification Silicon PNP Power Transistors 2SA1011 DESCRIPTION With TO-220 package Complement to type 2SC2344 APPLICATIONS High voltage switching , Audio frequency power amplifier; 100W output predriver applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PA

 7.3. Size:186K  lzg
 2sa1011 3ca1011.pdf pdf_icon

2SA1011D

2SA1011(3CA1011) PNP /SILICON PNP TRANSISTOR :100W Purpose: High voltage switching, AF power amplifier, 100W output predriver applications. : 2SC2344(3DA2344) Features: complementary pair with 2SC2344(3DA2344). /Absolute maximum ratings(Ta=25)

 7.4. Size:203K  inchange semiconductor
 2sa1011.pdf pdf_icon

2SA1011D

sc Silicon PNP Power Transistor 2SA1011DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Typ.)@ I = -0.5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -160V(Min.)(BR)CEOComplement to Type 2SC2344Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching, audio frequency powerampl

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MMUN2134LT1 | 2SB806-KR | 2SB75A | 2SC1118 | 2N6208 | GFT34 | BDT41AF

 

 
Back to Top

 


 
.