DTB114EN3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTB114EN3
Código: F14
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de DTB114EN3
DTB114EN3 Datasheet (PDF)
dtb114en3.pdf

Spec. No. : C277N3 Issued Date : 2005.11.11 CYStech Electronics Corp.Revised Date : Page No. : 1/5 PNP Digital Transistors (Built-in Resistors) DTB114EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete
pdtb114et p09 sot23.pdf

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi
pdtb114et 4.pdf

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi
pdtb114et 4.pdf

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi
Otros transistores... DTA144TUAFRA , DTA144WA3 , DTA144WET1G , DTA144WM3 , DTA144WM3T5G , DTA144WN3S , DTB113ZCA , DTB113ZS , 2SD669A , DTB114GK , DTB114TK , DTB123TK , DTB143TK , DTC013ZEB , DTC013ZM , DTC013ZUB , DTC014TEB .
History: 2SD2589P | G6005 | CJF715 | 2T837G | 2SD1839 | RCP117A | 2SD1619S
History: 2SD2589P | G6005 | CJF715 | 2T837G | 2SD1839 | RCP117A | 2SD1619S



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