DTB114EN3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTB114EN3
Código: F14
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Ganancia de corriente contínua (hFE): 56
Encapsulados: SOT-23
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DTB114EN3 datasheet
dtb114en3.pdf
Spec. No. C277N3 Issued Date 2005.11.11 CYStech Electronics Corp. Revised Date Page No. 1/5 PNP Digital Transistors (Built-in Resistors) DTB114EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete
pdtb114et p09 sot23.pdf
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi
pdtb114et 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi
pdtb114et 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi
Otros transistores... DTA144TUAFRA, DTA144WA3, DTA144WET1G, DTA144WM3, DTA144WM3T5G, DTA144WN3S, DTB113ZCA, DTB113ZS, D880, DTB114GK, DTB114TK, DTB123TK, DTB143TK, DTC013ZEB, DTC013ZM, DTC013ZUB, DTC014TEB
History: HN2A01FU
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