Биполярный транзистор DTB114EN3 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DTB114EN3
Маркировка: F14
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 56
Корпус транзистора: SOT-23
Аналоги (замена) для DTB114EN3
DTB114EN3 Datasheet (PDF)
dtb114en3.pdf
Spec. No. : C277N3 Issued Date : 2005.11.11 CYStech Electronics Corp.Revised Date : Page No. : 1/5 PNP Digital Transistors (Built-in Resistors) DTB114EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete
pdtb114et p09 sot23.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi
pdtb114et 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi
pdtb114et 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi
dtb114ek dtb114es.pdf
TransistorsDigital transistors (built-in resistors)DTB114EK / DTB114ESFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive biasing of theinput. They
dtb114ek.pdf
DTB114EKDatasheetPNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors)Outline SMT3Parameter ValueOUTVCC50VINIC(MAX.)500mAGNDR110kDTB114EKR2 SOT346(SC59)10kFeatures Inner circuit1) Built-In Biasing Resistors, R1 = R2 = 10k.OUTR1IN2) Built-in bias resistors enable the configuration ofR2 an inverte
ddtb114eu.pdf
DDTB (xxxx) UDDTB (xxxx) U PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Types Available (DDTD) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 "Green" Device (Note 3 and 4) B CC 2.00 2.20 Mechanical Data D 0.65 Nom
ddtb114ec.pdf
DDTB (xxxx) C PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A Complementary NPN Types Available (DDTD) SOT-23 Built-In Biasing Resistors, R1, R2 Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEWB C"Green" Device (Notes 2 and 3) A 0
dtb114e.pdf
UNISONIC TECHNOLOGIES CO., LTD DTB114E PNP SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead
ldtb114eet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTB114EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an 1inverter circuit without connecting external input resistors (see equivalent circuit). 22) The bias resistors consis
dtb114e.pdf
SMD Type TransistorsDigital TransistorsDTB114E (KDTB114E)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)1 2 The bias resistors consist of thin-film resistors with complete+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -
chdtb114ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTB114EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
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History: BUW50
History: BUW50
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