DTB123TK . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTB123TK
Código: F92
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC-59
Búsqueda de reemplazo de transistor bipolar DTB123TK
DTB123TK Datasheet (PDF)
dtb123tk.pdf
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chdtb123tkgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTB123TKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
pdtb123t.pdf
PDTB123T seriesPNP 500 mA, 50 V resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 03 16 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTB123TK SOT346 SC-59A TO-236 PDTD123TKPDTB123TS[1] SOT54 SC-43A TO-92 PDTD123TS
ddtb123tu.pdf
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ddtb123tc.pdf
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ldtb123tet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTB123TET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an 1inverter circuit without connecting external input resistors (see equivalent circuit). 22) The bias resistors consis
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