DTC114ES3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC114ES3
Código: 8A
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SOT-323
Búsqueda de reemplazo de transistor bipolar DTC114ES3
DTC114ES3 Datasheet (PDF)
dtc114es3.pdf
Spec. No. : C351S3 Issued Date : 2002.06.01 CYStech Electronics Corp.Revised Date : 2010.11.10 Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC114ES3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
pdtc114es 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114ESNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ESFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit designhandbook, halfpage2 Reduces numbe
pdtc114es 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114ESNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ESFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit designhandbook, halfpage2 Reduces numbe
dtc114eseria 8a-m sot416.pdf
DTC114EET1 SERIESBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a series ba
dtc114eca dtc114esa dtc114eua.pdf
DTC114EE / DTC114EUA DTC114ECA / DTC114ESA / DTC114EM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES DTC114EE (SOT-523) DTC114EUA (SOT-323) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equ
dtc114esa.pdf
DTC114ESANPN DIGITAL TRANSISTORP b Lead(Pb)-FreeFeatures:1 2 3 without connecting external input resistors(see equivalent circuit).(1)GND (2)OUT (3)IN to allow negative biasing of the input.They also have the advantage device design easy.Absolute maximum ratings(Ta=25)Parameter Symbol Value UnitSupply voltage VCC 50 VInput voltage VIN -10 ~ 40 VIO 50Output curre
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
