2SA1015 Todos los transistores

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit mm Driver Stage Amplifier Applications High voltage and high current VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage BV =-50V CEO 1 * Collector Current up to 150mA * High h Linearity FE TO-92 * Complement to UTC 2SC1815 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SA1015L-xx-... See More ⇒

TRANSISTOR (PNP) 1.EMITTER 2.COLLECTOR Power dissipation 3.BASE Equivalent Circuit Z Z 1 ... See More ⇒

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Ba... See More ⇒

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SMD Type or SMD Type TransistICs PNP Transistors 2SA1015 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current VCEO =-50V(min.),IC=-150mA(max.) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Low niose NF=1dB(Typ.) at f=1KHz 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VC... See More ⇒

2SA1015 BIPOLAR TRANSISTOR (PNP) FEATURES High current And High voltage Excellent h Linearity FE Low Noise Surface Mount device Complementary to 2SC1815 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise no... See More ⇒

isc Silicon PNP Transistor 2SA1015 DESCRIPTION High Voltage and High Current Vceo=-50V(Min. Ic=-150mA(Max) Excellent hFE Linearity Low Noise Complement to Type 2SC1815 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver stage amplifier applications. ABSOL... See More ⇒

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit mm Low Noise Amplifier Applications High voltage and high current VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) ... See More ⇒

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage 50V Plastic-Encapsulate Operating and storage junction temperature range -... See More ⇒

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage 50V Plastic-Encapsulate Operating and storage junction temperature range -... See More ⇒

2SA1015-O MCC Micro Commercial Components TM 2SA1015-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1015-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 0.4Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage 50V Plastic-Encapsulate Operating and storage junction temperature range -... See More ⇒

2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 FEATURES B 1.200 1.400 . Power Dissipation C 0.890 1.110 PCM 0.2 W ( Ta = 25 ) A D 0.370 0.500 . Collector Current L G 1.780 2.040 ICM -0.15 A 3 3 H 0.013 0.100 . Collector-Base Volt... See More ⇒

2SA1015M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , h , , 2SC1815M FE High voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M. / Applicati... See More ⇒

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit... See More ⇒

SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Complement to 2SC1815 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN 1 2 3 Emitter-Base Voltage Vebo -5 V ... See More ⇒

R UMW UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP) 2SA1015 MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES High voltage and high current Excellent hFE Linearity Complementary to C1815 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emit... See More ⇒

www.msksemi.com 2SA1015-MS Semiconductor Compiance Semiconductor Compiance TRANSI STOR ( PNP) FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Complementary to C1815-MS 2. EMITTER SOT 23 3. COLLECTOR MARKING BA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emi... See More ⇒

2SC1015 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High voltage and high current VCEO =-50V(min.),IC=-150mA(max.) Simplified outline(SOT-23) Low niose NF=1dB(Typ.) at f=1KHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Con... See More ⇒

2SA1015 2 SA10 15 TRANSISTOR (PNP) FEATURES SOT-23 High voltage and high current Excellent hFE Linearity 1 BASE Complementary to C1815 2 EMITTER 3 COLLECTOR O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit -50 Collector Base Voltage VCBO V -50 Collector Emitter Voltage VCEO V -5 Emitter Base Voltage VEBO V Collector Current IC -150 mA ... See More ⇒