2SA1015 Datasheet and Replacement

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h = 80 (typ.) at V = -6 V, I = -150 mA FE FE (2) CE C: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage: BV =-50V CEO1* Collector Current up to 150mA * High h Linearity FETO-92* Complement to UTC 2SC1815 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SA1015L-xx-

TRANSISTOR (PNP) 1.EMITTER 2.COLLECTOR Power dissipation 3.BASE Equivalent Circuit Z Z 1

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity 1. BASE Low niose 2. EMITTER Complementary to 2SC1815 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Ba

2SA1015 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features ,, h ,, 2SC1815 FEHigh voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815. / Applications

SMD Type orSMD Type TransistICsPNP Transistors2SA1015SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh voltage and high currentVCEO:=-50V(min.),IC=-150mA(max.)1 2+0.050.95+0.1-0.1 0.1 -0.01Low niose: NF=1dB(Typ.) at f=1KHz1.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VC

2SA1015BIPOLAR TRANSISTOR (PNP)FEATURES High current And High voltage Excellent h LinearityFE Low Noise Surface Mount device Complementary to 2SC1815SOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise no

`isc Silicon PNP Transistor 2SA1015DESCRIPTIONHigh Voltage and High CurrentVceo=-50V(Min.Ic=-150mA(Max)Excellent hFE LinearityLow NoiseComplement to Type 2SC1815Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.ABSOL

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Unit: mm Low Noise Amplifier Applications High voltage and high current: VCEO = -50 V (min), I = -150 mA (max) C Excellent h linearity: h (2) = 80 (typ.) at V = -6 V, I = -150 mA FE FE CE C: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)

2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -

2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -

2SA1015-OMCCMicro Commercial ComponentsTM2SA1015-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1015-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation.PNP Silicon Collector-current 0.15A Collector-base Voltage 50VPlastic-Encapsulate Operating and storage junction temperature range: -

2SA1015K PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23Dim Min MaxA 2.800 3.040 FEATURES B 1.200 1.400. Power Dissipation C 0.890 1.110PCM: 0.2 W ( Ta = 25 ) AD 0.370 0.500. Collector Current LG 1.780 2.040ICM: -0.15 A 33 H 0.013 0.100. Collector-Base Volt

2SA1015M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,, h ,, 2SC1815M FEHigh voltage and high current, excellent hFE linearity, low noise, complementary pair with 2SC1815M. / Applicati

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

SEMICONDUCTOR 2SA1015LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V PIN: 1 2 3Emitter-Base Voltage Vebo -5 V

RUMW UMW 2SA1015 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP)2SA1015MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: High voltage and high current Excellent hFE Linearity Complementary to C1815 MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -50 VCollector-Emit

www.msksemi.com2SA1015-MSSemiconductor CompianceSemiconductor Compiance TRANSI STOR ( PNP)FEATURES High voltage and high current Excellent hFE Linearity1. BASE Complementary to C1815-MS2. EMITTERSOT23 3. COLLECTORMARKING: BA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emi

2SC1015PNP Transistors321.BaseFeatures 2.Emitter1 3.CollectorHigh voltage and high currentVCEO:=-50V(min.),IC=-150mA(max.) Simplified outline(SOT-23)Low niose: NF=1dB(Typ.) at f=1KHzAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current -Con

2SA10152 SA10 15 TRANSISTOR (PNP) FEATURES SOT-23 High voltage and high current Excellent hFE Linearity1BASE Complementary to C18152EMITTER 3COLLECTOR OAbsolute Maximum Ratings (Ta = 25 C)Parameter Symbol Value Unit -50 Collector Base Voltage VCBO V -50 Collector Emitter Voltage VCEO V -5 Emitter Base Voltage VEBO V Collector Current IC -150 mA