DTC114TN3 Todos los transistores

 

DTC114TN3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTC114TN3
   Código: 8E
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de transistor bipolar DTC114TN3

 

DTC114TN3 Datasheet (PDF)

 ..1. Size:283K  cystek
dtc114tn3.pdf

DTC114TN3 DTC114TN3

Spec. No. : C353S3 Issued Date : 2002.06.01 CYStech Electronics Corp.Revised Date : 2011.11.16 Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC114TN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

 7.1. Size:53K  motorola
pdtc114ts 2.pdf

DTC114TN3 DTC114TN3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC114TSNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TSFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 7.2. Size:52K  motorola
pdtc114tk 2.pdf

DTC114TN3 DTC114TN3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114TKNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 May 28File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TKFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 7.3. Size:53K  motorola
pdtc114tu 3.pdf

DTC114TN3 DTC114TN3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114TUNPN resistor-equipped transistor1999 Apr 16Preliminary specificationSupersedes data of 1998 May 19Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC114TUFEATURES Built-in bias resistor R1 (typ. 10 k)3handbook, 4 columns Simplification of circuit design3

 7.4. Size:51K  motorola
pdtc114te 2.pdf

DTC114TN3 DTC114TN3

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114TENPN resistor-equipped transistor1998 Aug 03Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design Reduces

 7.5. Size:51K  motorola
pdtc114tt 3.pdf

DTC114TN3 DTC114TN3

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC114TTNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 19Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC114TTFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design3handbook, 4 columns Reduces

 7.6. Size:61K  motorola
dtc114te 94 sot416.pdf

DTC114TN3 DTC114TN3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114TE/DDTC114TEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

 7.7. Size:91K  motorola
dtc114terev0.pdf

DTC114TN3 DTC114TN3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114TE/DDTC114TEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

 7.8. Size:53K  philips
pdtc114ts 2.pdf

DTC114TN3 DTC114TN3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC114TSNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TSFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 7.9. Size:52K  philips
pdtc114tk 2.pdf

DTC114TN3 DTC114TN3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114TKNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 May 28File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TKFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 7.10. Size:53K  philips
pdtc114tu 3.pdf

DTC114TN3 DTC114TN3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114TUNPN resistor-equipped transistor1999 Apr 16Preliminary specificationSupersedes data of 1998 May 19Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC114TUFEATURES Built-in bias resistor R1 (typ. 10 k)3handbook, 4 columns Simplification of circuit design3

 7.11. Size:51K  philips
pdtc114te 2.pdf

DTC114TN3 DTC114TN3

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114TENPN resistor-equipped transistor1998 Aug 03Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design Reduces

 7.12. Size:78K  philips
pdtc114tk pdtc114ts.pdf

DTC114TN3 DTC114TN3

PDTC114T seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = openRev. 08 9 February 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1: Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC114TE SOT416 SC-75 - PDTA114TEPDTC114TK SOT346 SC-59A TO-236 PDTA114TKPDTC114TM SOT883

 7.13. Size:51K  philips
pdtc114tt 3.pdf

DTC114TN3 DTC114TN3

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC114TTNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 19Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC114TTFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design3handbook, 4 columns Reduces

 7.14. Size:81K  philips
pdtc114t ser.pdf

DTC114TN3 DTC114TN3

PDTC114T seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = openRev. 08 9 February 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1: Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC114TE SOT416 SC-75 - PDTA114TEPDTC114TK SOT346 SC-59A TO-236 PDTA114TKPDTC114TM SOT883

 7.15. Size:78K  rohm
dtc114t-x.pdf

DTC114TN3 DTC114TN3

100mA / 50V Digital transistors (with built-in resistors) DTC114TM / DTC114TE / DTC114TUA / DTC114TKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to

 7.16. Size:1451K  rohm
dtc114tuafra.pdf

DTC114TN3 DTC114TN3

DTC114T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R110kDTC114TM DTC114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC114TE DTC114TUB

 7.17. Size:1451K  rohm
dtc114tefra.pdf

DTC114TN3 DTC114TN3

DTC114T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R110kDTC114TM DTC114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC114TE DTC114TUB

 7.18. Size:1451K  rohm
dtc114teb dtc114tkafra dtc114tmfha dtc114tub.pdf

DTC114TN3 DTC114TN3

DTC114T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R110kDTC114TM DTC114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC114TE DTC114TUB

 7.19. Size:741K  rohm
dtc114t.pdf

DTC114TN3 DTC114TN3

DTC114T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3FParameter ValueCollector Collector VCEO50VBase Base IC100mAEmitter Emitter R110kWDTC114TM DTC114TEB (SC-105AA) (SC-89) EMT3 UMT3FCollector Collector lFeaturesBase Base 1) Built-In Biasing ResistorsEmitter Emitter 2) Built-in bia

 7.20. Size:58K  rohm
dtc114te-tua-tka-tca 04 sot416 323 346 23.pdf

DTC114TN3 DTC114TN3

TransistorsDigital transistors (built in resistor)DTC114TE / DTC114TUA / DTC114TKADTC114TCA / DTC114TSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow ne

 7.21. Size:58K  rohm
dtc114te.pdf

DTC114TN3 DTC114TN3

TransistorsDigital transistors (built in resistor)DTC114TE / DTC114TUA / DTC114TKADTC114TCA / DTC114TSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow ne

 7.22. Size:92K  diodes
ddtc114te.pdf

DTC114TN3 DTC114TN3

DDTC (R1-ONLY SERIES) ENPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound (Notes 2 & 3). UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 only Moisture Sensitiv

 7.23. Size:78K  diodes
ddtc113tka ddtc123tka ddtc143tka ddtc114tka ddtc124tka ddtc144tka ddtc115tka ddtc125tka.pdf

DTC114TN3 DTC114TN3

DDTC (R1-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) CDim Min Max Built-In Biasing Resistor, R1 only A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B CB 1.50 1.70 "Green" Device, Note 3 and 4 C 2.70 3.00 Mechanical Data EBD 0.9

 7.24. Size:98K  diodes
ddtc113tca ddtc123tca ddtc143tca ddtc114tca ddtc124tca ddtc144tca ddtc115tca ddtc125tca.pdf

DTC114TN3 DTC114TN3

DDTC(R1-ONLY SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTORProduct Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) Complementary PNP Types Available (DDTA) DDTC113TCA 1K Built-In Biasing Resistors, R1 only DDTC123TCA 2.2K Lead Free, RoHS Compliant (Note 1) DDTC143TCA 4.7K Halogen

 7.25. Size:338K  diodes
ddtc113tua ddtc123tua ddtc143tua ddtc114tua ddtc124tua ddtc144tua ddtc115tua ddtc125tua.pdf

DTC114TN3 DTC114TN3

DDTC (R1 ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT323 Built-In Biasing Resistor, R1 Only Case Material: Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0 Surface Mount Package Suited for Automated Assembly Moisture Sensitiv

 7.26. Size:167K  diodes
ddtc114tua.pdf

DTC114TN3 DTC114TN3

DDTC (R1-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max C Built-In Biasing Resistor, R1 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 B C "Green" Device (Note 3 and 4) C 2.00 2.20 D 0.65 Nominal BEMe

 7.27. Size:208K  mcc
dtc114tua sot-323.pdf

DTC114TN3 DTC114TN3

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthDTC114TUAMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 NPN Digital Transistor Built-in

 7.28. Size:206K  mcc
dtc114te sot-523.pdf

DTC114TN3 DTC114TN3

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsDTC114TECA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1NPN Digital Transistor Built-in

 7.29. Size:144K  onsemi
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf

DTC114TN3 DTC114TN3

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 7.30. Size:155K  onsemi
dtc114tm3.pdf

DTC114TN3 DTC114TN3

MUN2215, MMUN2215L,MUN5215, DTC114TE,DTC114TM3, NSBC114TF3Digital Transistors (BRT)R1 = 10 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

 7.31. Size:82K  onsemi
dtc114em3t5g dtc114tm3t5g dtc114ym3t5g dtc123em3t5g.pdf

DTC114TN3 DTC114TN3

DTC114EM3T5G SeriesDigital Transistors (BRT)NPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors; a series base resis

 7.32. Size:161K  utc
dtc114t.pdf

DTC114TN3 DTC114TN3

UNISONIC TECHNOLOGIES CO., LTD DTC114T NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

 7.33. Size:199K  secos
dtc114tseries.pdf

DTC114TN3 DTC114TN3

DTC114TE/DTC114TUA/DTC114TKADTC114TCA/TC114TSAElektronische BauelementeNPN Digital Transistors (Built-in Resistors)FEATURES* Built-in bias resistors enable the configuration ofan inverter circuit without connecting input resistors* Only the on/off confitions need to be set for operation,making device design easy.* The bias resistors consis of thin-film resistors withcompete

 7.34. Size:196K  secos
dtc114tca dtc114tka dtc114tsa dtc114tua.pdf

DTC114TN3 DTC114TN3

DTC114TE/DTC114TUA/DTC114TKADTC114TCA/TC114TSAElektronische BauelementeNPN Digital Transistors (Built-in Resistors)FEATURES* Built-in bias resistors enable the configuration ofan inverter circuit without connecting input resistors* Only the on/off confitions need to be set for operation,making device design easy.* The bias resistors consis of thin-film resistors withcompete

 7.35. Size:2802K  jiangsu
dtc114tm dtc114te dtc114tua dtc114tka dtc114tca dtc114tsa.pdf

DTC114TN3 DTC114TN3

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) DTC114TM/DTC114TE/DTC114TUADTC114TKA /DTC114TCA/DTC114TSA Equivalent CircuitDIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuitwithout connecting external input resistors(see equivalent circuit) The bias resistors consist of t

 7.36. Size:144K  lge
dtc114t.pdf

DTC114TN3 DTC114TN3

DTC114TE/DTC114TUA/DTC114TCADTC114TKA/DTC114TSADigital Transistor(NPN)Features Built-in bias resistors enable the configuration of an inverter circuit without connecting extemal input resistors. The bias resistors conisit of thin-film resistors with complete isolation to without connecting extemal input. They also have the advantage of almost completely Eliminating para

 7.37. Size:291K  willas
dtc114tca.pdf

DTC114TN3 DTC114TN3

FM120-M WILLASTHRUDTC114TCANPN Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board spa

 7.38. Size:294K  willas
dtc114te.pdf

DTC114TN3 DTC114TN3

FM120-M WILLASDTC114TE THRUNPN Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board spac

 7.39. Size:286K  willas
dtc114tua.pdf

DTC114TN3 DTC114TN3

FM120-M WILLASTHRUDTC114TUANPN Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board spa

 7.40. Size:143K  cystek
dtc114ts3.pdf

DTC114TN3 DTC114TN3

Spec. No. : C353S3 Issued Date : 2002.06.01 CYStech Electronics Corp.Revised Date : 2002.11.04 Page No. : 1/3 General Purpose NPN Digital Transistors (Built-in Resistors) DTC114TS3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-f

 7.41. Size:545K  lrc
ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf

DTC114TN3 DTC114TN3

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 7.42. Size:545K  lrc
ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g.pdf

DTC114TN3 DTC114TN3

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 7.43. Size:259K  first silicon
dtc114t.pdf

DTC114TN3 DTC114TN3

SEMICONDUCTORDTC114TTECHNICAL DATABias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkBThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorKTransistor) contains a single transistor with a monolithic bias networkresistor. The BRT eliminates the

 7.44. Size:140K  chenmko
chdtc114tugp.pdf

DTC114TN3 DTC114TN3

CHENMKO ENTERPRISE CO.,LTDCHDTC114TUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 7.45. Size:61K  chenmko
chdtc114tkgp.pdf

DTC114TN3 DTC114TN3

CHENMKO ENTERPRISE CO.,LTDCHDTC114TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 7.46. Size:84K  chenmko
chdtc114tegp.pdf

DTC114TN3 DTC114TN3

CHENMKO ENTERPRISE CO.,LTDCHDTC114TEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA1061

 

 
Back to Top

 


History: 2SA1061

DTC114TN3
  DTC114TN3
  DTC114TN3
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
Back to Top