DTC114TN3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTC114TN3

Código: 8E

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-23

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DTC114TN3 datasheet

 ..1. Size:283K  cystek
dtc114tn3.pdf pdf_icon

DTC114TN3

Spec. No. C353S3 Issued Date 2002.06.01 CYStech Electronics Corp. Revised Date 2011.11.16 Page No. 1/6 NPN Digital Transistors (Built-in Resistors) DTC114TN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

 7.1. Size:53K  motorola
pdtc114ts 2.pdf pdf_icon

DTC114TN3

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC114TS NPN resistor-equipped transistor 1998 May 18 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TS FEATURES Built-in bias resistor R1 (typ. 10 k ) Simplification of circuit desi

 7.2. Size:52K  motorola
pdtc114tk 2.pdf pdf_icon

DTC114TN3

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114TK NPN resistor-equipped transistor 1998 May 19 Product specification Supersedes data of 1997 May 28 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TK FEATURES Built-in bias resistor R1 (typ. 10 k ) Simplification of circuit desi

 7.3. Size:53K  motorola
pdtc114tu 3.pdf pdf_icon

DTC114TN3

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114TU NPN resistor-equipped transistor 1999 Apr 16 Preliminary specification Supersedes data of 1998 May 19 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC114TU FEATURES Built-in bias resistor R1 (typ. 10 k ) 3 handbook, 4 columns Simplification of circuit design 3

Otros transistores... DTC114EY3, DTC114TEB, DTC114TEFRA, DTC114TET1G, DTC114TKAFRA, DTC114TM3, DTC114TM3T5G, DTC114TMFHA, BD140, DTC114TS3, DTC114TUAFRA, DTC114TUB, DTC114WN3, DTC114WS3, DTC114YC3, DTC114YEFRA, DTC114YET1G